Chemical Vapor Deposition - Revision history

Cmditradmin: /* Operation */

2012-02-09T18:35:16Z

Operation

2011-10-11T17:43:26Z

← Older revision		Revision as of 10:43, 11 October 2011
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	<table id="toc" style="width: 100%">		<table id="toc" style="width: 100%">
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	<td style="text-align: center; width: 33%">[[Main_Page#~~Research Equipment, Devices and Techniques~~\|Return to Research Tool Menu]]</td>		<td style="text-align: center; width: 33%">[[Main_Page#Synthesis_and_Fabrication\|Return to Research Tool Menu]]</td>
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	=== Background ===		=== Background ===

2011-08-04T22:09:41Z

Significance

← Older revision		Revision as of 15:09, 4 August 2011
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	In this method heated reactants are fed into the chamber continuously. The reaction happens close to the moment of deposition. The flow rate of the gases can be used to efficiently support the stoichiometry of the reaction.		In this method heated reactants are fed into the chamber continuously. The reaction happens close to the moment of deposition. The flow rate of the gases can be used to efficiently support the stoichiometry of the reaction.

	<swf width="~~400~~" height="400">images/6/62/Cvd.swf</swf>		<swf width="600" height="400">images/6/62/Cvd.swf</swf>

	=== Operation===		=== Operation===

2011-08-04T22:09:05Z

Operation

2011-08-04T22:08:19Z

Significance

← Older revision		Revision as of 15:08, 4 August 2011
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	=== Significance ===		=== Significance ===
	CVD is a high volume, high purity process that can be conducted with low vacuum. The flow rate of the gases can be used to efficiently support the stoichiometry of the reaction.		'''Batch CVD'''
			CVD is a high volume, high purity process that can be conducted with low vacuum.
			In this technique the sample is loaded into a sample holder that can be heated. The bell jar is evacuated and deposition of the sample occurs. Thickness of the coating can be precisely controlled by timing.

			<swf width="400" height="400">images/b/b0/Cvd_bell.swf</swf>

			'''Continuous Flow CVD'''
			In this method heated reactants are fed into the chamber continuously. The reaction happens close to the moment of deposition. The flow rate of the gases can be used to efficiently support the stoichiometry of the reaction.

			<swf width="400" height="400">images/6/62/Cvd.swf</swf>

	~~<swf width="600" height="400">images/6/62/Cvd.swf</swf>~~
	=== Operation===		=== Operation===

2011-06-20T16:29:07Z

Background

← Older revision		Revision as of 09:29, 20 June 2011
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	=== Background ===		=== Background ===
			[[Image:750px-CVD Reaction Chamber - GPN-2000-001466.jpg\|thumb\|300px\|Chemical Vapor Deposition Apparatus ]]
	Chemical Vapor Deposition is a common technique for apply thin films to electronic devices. Chemical reagents are supplied as gases into chamber and allowed to react or decompose at the surface of as substrate and form a new substance.		Chemical Vapor Deposition is a common technique for apply thin films to electronic devices. Chemical reagents are supplied as gases into chamber and allowed to react or decompose at the surface of as substrate and form a new substance.
			<br clear='all'>
	~~[[Image:750px-CVD Reaction Chamber - GPN-2000-001466.jpg\|thumb\|300px\| ]]~~

	=== Significance ===		=== Significance ===

2011-06-20T16:28:20Z

Background

← Older revision		Revision as of 09:28, 20 June 2011
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	=== Background ===		=== Background ===
	Chemical Vapor Deposition is a common technique for apply thin films to electronic devices. Chemical reagents are supplied as gases into chamber and allowed to react or decompose at the surface of as substrate and form a new substance.		Chemical Vapor Deposition is a common technique for apply thin films to electronic devices. Chemical reagents are supplied as gases into chamber and allowed to react or decompose at the surface of as substrate and form a new substance.

			[[Image:750px-CVD Reaction Chamber - GPN-2000-001466.jpg\|thumb\|300px\| ]]

	=== Significance ===		=== Significance ===

2011-06-15T17:56:17Z

← Older revision		Revision as of 10:56, 15 June 2011
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	=== Background ===		=== Background ===
	~~<swf width="600" height="400">images/6/62/Cvd~~.~~swf</swf>~~		Chemical Vapor Deposition is a common technique for apply thin films to electronic devices. Chemical reagents are supplied as gases into chamber and allowed to react or decompose at the surface of as substrate and form a new substance.

	=== Significance ===		=== Significance ===
			CVD is a high volume, high purity process that can be conducted with low vacuum. The flow rate of the gases can be used to efficiently support the stoichiometry of the reaction.

			<swf width="600" height="400">images/6/62/Cvd.swf</swf>
	=== Operation===		=== Operation===

2011-06-15T17:44:43Z

Background

← Older revision		Revision as of 10:44, 15 June 2011
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	=== Background ===		=== Background ===
	<swf width="~~500~~" height="400">images/6/62/Cvd.swf</swf>		<swf width="600" height="400">images/6/62/Cvd.swf</swf>

	=== Significance ===		=== Significance ===

2011-06-15T17:44:28Z

Background

← Older revision		Revision as of 10:44, 15 June 2011
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	=== Background ===		=== Background ===
			<swf width="500" height="400">images/6/62/Cvd.swf</swf>

	=== Significance ===		=== Significance ===